Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

authored by

Jan Schmidt, Armin G. Aberle

Abstract

Light-based microwave-detected photoconductance decay method (MW-PCD) measurements on plasma-enhanced chemical vapor deposited (PECVD) SiN_x surface-passivated float-zone silicon wafers of different doping type and resistivities are used to determine the dependence of the effective surface recombination velocity S_eff on the injection level Δn within the wafer. Capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements are performed to determine the insulator charge density Q_f, the interface state density D_it(E), and the capture cross sections σ_n(E) and σ_p(E). To avoid problems with leakage currents and hysteresis effects with Si-rich SiN_x films, these investigations are performed on stoichiometric SiN_x films.

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Article

Journal

Journal of applied physics

Volume

85

Pages

3626-3633

No. of pages

8

ISSN

0021-8979

Publication date

01.04.1999

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1063/1.369725 (Access: Closed)