Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

verfasst von

Jan Schmidt, Armin G. Aberle

Abstract

Light-based microwave-detected photoconductance decay method (MW-PCD) measurements on plasma-enhanced chemical vapor deposited (PECVD) SiN_x surface-passivated float-zone silicon wafers of different doping type and resistivities are used to determine the dependence of the effective surface recombination velocity S_eff on the injection level Δn within the wafer. Capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements are performed to determine the insulator charge density Q_f, the interface state density D_it(E), and the capture cross sections σ_n(E) and σ_p(E). To avoid problems with leakage currents and hysteresis effects with Si-rich SiN_x films, these investigations are performed on stoichiometric SiN_x films.

Externe Organisation(en)

Institut für Solarenergieforschung GmbH (ISFH)

Typ

Artikel

Journal

Journal of applied physics

Band

85

Seiten

3626-3633

Anzahl der Seiten

8

ISSN

0021-8979

Publikationsdatum

01.04.1999

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1063/1.369725 (Zugang: Geschlossen)