Temperature dependence of the band gap of Si 28:P at very low temperatures measured via time-resolved optical spectroscopy
- authored by
- E. Sauter, N. V. Abrosimov, J. Hübner, M. Oestreich
- Abstract
We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.
- Organisation(s)
-
Institute of Solid State Physics
- External Organisation(s)
-
Leibniz Institute for Crystal Growth (IKZ)
- Type
- Article
- Journal
- Physical Review Research
- Volume
- 5
- No. of pages
- 10
- ISSN
- 2643-1564
- Publication date
- 15.03.2023
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Physics and Astronomy
- Electronic version(s)
-
https://doi.org/10.1103/PhysRevResearch.5.013182 (Access:
Open)