Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

authored by: O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, F. Ernst, R. J. Haug
Abstract: Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.
Organisation(s): Institute of Solid State Physics
External Organisation(s): Max Planck Institute for Solid State Research (MPI-FKF)
Max Planck Institute for Intelligent Systems
Type: Article
Journal: Applied Physics Letters
Volume: 77
Pages: 4341-4343
No. of pages: 3
ISSN: 0003-6951
Publication date: 19.12.2000
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Physics and Astronomy (miscellaneous)
Electronic version(s): https://doi.org/10.1063/1.1332817 (Access: Closed)
https://doi.org/10.15488/2828 (Access: Open)