Imaging techniques for the analysis of silicon wafers and solar cells

authored by

K. Bothe, K. Ramspeck, D. Hinken, R. Brendel

Abstract

For large area devices a spatial analysis of local device and material parameters is essentially important. Imaging techniques allowing a fast and contactless analysis with a high spatial resolution have become a versatile characterization tool during the last decade. We present a comprehensive overview over the existing imaging techniques for the analysis of silicon wafers and solar cells utilizing different spectral ranges of photon emission. Additionally, we report on recent studies of local junction breakdown and the emission of light from solar cells under forward and reverse bias using luminescence imaging and dark lock-in thermography. Finally we present a calibration-free dynamic infrared carrier lifetime mapping (dynamic-ILM) technique, yielding images of the carrier lifetime of multi-crystalline silicon wafers within seconds.

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Conference contribution

Pages

63-78

No. of pages

16

Publication date

2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Engineering

Electronic version(s)

https://doi.org/10.1149/1.2980293 (Access: Closed)