Resonant tunneling diodes based on stacked self-assembled Ge/Si islands

authored by

O. G. Schmidtt, U. Denker, O. Kienzle, F. Ernst, R. J. Haug, K. Eberl

Abstract

We present a new concept and first results of resonant tunneling diodes based on self-assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current-voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistence is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.

Organisation(s)

Institute of Solid State Physics

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Max Planck Institute for Intelligent Systems

Type

Conference contribution

Pages

487-490

No. of pages

4

Publication date

01.12.2000

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Engineering(all)