Electrical Properties of Thin ZrSe₃Films for Device Applications

verfasst von

Lars Thole, Christopher Belke, Sonja Locmelis, Peter Behrens, Rolf J. Haug

Abstract

Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe₃are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe₃to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.

Organisationseinheit(en)

Institut für Festkörperphysik
Institut für Anorganische Chemie
Laboratorium für Nano- und Quantenengineering
QuantumFrontiers

Typ

Artikel

Journal

ACS Omega

Band

7

Seiten

39913-39916

Anzahl der Seiten

4

Publikationsdatum

08.11.2022

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Chemie (insg.), Chemische Verfahrenstechnik (insg.)

Elektronische Version(en)

https://doi.org/10.1021/acsomega.2c04198 (Zugang: Offen)