Percolation metal-insulator transitions in the two-dimensional electron system of AlGaAs/GaAs heterostructures

verfasst von

A. A. Shashkin, V. T. Dolgopolov, G. V. Kravchenko, M. Wendel, R. Schuster, J. P. Kotthaus, R. J. Haug, K. Von Klitzing, K. Ploog, H. Nickel, W. Schlapp

Abstract

We investigate the transport properties of insulating phases in the 2D electron system of high-mobility AlGaAs/GaAs heterostructures of Corbino geometry at very low temperatures. We find that the nonlinear current-voltage characteristics for insulating phases in the integer and fractional quantum Hall regime and for a low-density insulating phase are very similar. The behavior of these characteristics with changing temperature and filling factor unambiguously points to the percolation metal-insulator transition as the cause for all insulating phases investigated. We propose a metal-insulator phase diagram in the (B,Ns) plane based on our experimental data.

Externe Organisation(en)

RAS - Institute of Solid State Physics
Ludwig-Maximilians-Universität München (LMU)
Max-Planck-Institut für Festkörperforschung
Telekom Innovation Laboratories

Typ

Artikel

Journal

Physical review letters

Band

73

Seiten

3141-3144

Anzahl der Seiten

4

ISSN

0031-9007

Publikationsdatum

01.01.1994

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)

Elektronische Version(en)

https://doi.org/10.1103/PhysRevLett.73.3141 (Zugang: Unbekannt)