Reshaping of 3D GaN Structures during Annealing

Phenomenological Description and Mathematical Model

verfasst von: Irene Manglano Clavero, Christoph Margenfeld, Jana Hartmann, Andreas Waag
Abstract: In this work, the thermal decomposition of GaN three-dimensional (3D) microstructures was studied in an attempt to better understand the peculiarities of the complex growth process. Microfins with nonpolar a-plane sidewall facets have been investigated as model structures, and the influence of initial geometry and different annealing conditions in a metal-organic chemical vapor deposition reactor on the thermal reshaping has been investigated. We demonstrate that the annealing of these structures in an ammonia-containing atmosphere, which is comparable to that used during overgrowth, results in the decomposition of the c-plane top surfaces, diffusion of gallium adatoms to the a-plane sidewalls, and their reincorporation on these facets. Such behavior is attributed to the differences in thermal stability of the polar and nonpolar surfaces. By studying the thermal decomposition of microfins with varying geometry, we show that this phenomenon depends mainly on the aspect ratio of these structures. We attribute the strongly enhanced decomposition rate of high-aspect-ratio microstructures to the depletion of the gallium adlayer by adjacent crystal facets, which is the main factor discerning the growth of 3D microstructures from the planar case. Additionally, a simplified model for thermal decomposition involving the main physical mechanisms was proposed and applied to reproduce the experimentally observed behavior. The modeling procedure allows the experimental determination of the diffusion coefficients of gallium adatoms on the a-plane surface under the growth conditions applied. This work highlights the high sensitivity of 3D microstructures to thermal decomposition and offers a toolbox to understand their dependence on the geometry. A proper comprehension of thermal decomposition enables superior control of the GaN overgrowth on 3D topographies, which is a crucial approach for realizing novel device architectures relevant for power electronics or microLED displays.
Externe Organisation(en): Technische Universität Braunschweig
Typ: Artikel
Journal: Crystal Growth and Design
Band: 24
Seiten: 279-292
Anzahl der Seiten: 14
ISSN: 1528-7483
Publikationsdatum: 03.01.2024
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Chemie (insg.), Werkstoffwissenschaften (insg.), Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1021/acs.cgd.3c01023 (Zugang: Offen)

BibTeX

@article{586103ec453f422eae7b84eabd8eaed8,
title = "Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model",
abstract = "In this work, the thermal decomposition of GaN three-dimensional (3D) microstructures was studied in an attempt to better understand the peculiarities of the complex growth process. Microfins with nonpolar a-plane sidewall facets have been investigated as model structures, and the influence of initial geometry and different annealing conditions in a metal-organic chemical vapor deposition reactor on the thermal reshaping has been investigated. We demonstrate that the annealing of these structures in an ammonia-containing atmosphere, which is comparable to that used during overgrowth, results in the decomposition of the c-plane top surfaces, diffusion of gallium adatoms to the a-plane sidewalls, and their reincorporation on these facets. Such behavior is attributed to the differences in thermal stability of the polar and nonpolar surfaces. By studying the thermal decomposition of microfins with varying geometry, we show that this phenomenon depends mainly on the aspect ratio of these structures. We attribute the strongly enhanced decomposition rate of high-aspect-ratio microstructures to the depletion of the gallium adlayer by adjacent crystal facets, which is the main factor discerning the growth of 3D microstructures from the planar case. Additionally, a simplified model for thermal decomposition involving the main physical mechanisms was proposed and applied to reproduce the experimentally observed behavior. The modeling procedure allows the experimental determination of the diffusion coefficients of gallium adatoms on the a-plane surface under the growth conditions applied. This work highlights the high sensitivity of 3D microstructures to thermal decomposition and offers a toolbox to understand their dependence on the geometry. A proper comprehension of thermal decomposition enables superior control of the GaN overgrowth on 3D topographies, which is a crucial approach for realizing novel device architectures relevant for power electronics or microLED displays.",
author = "{Manglano Clavero}, Irene and Christoph Margenfeld and Jana Hartmann and Andreas Waag",
note = "Funding Information: The authors would like to thank K. Strempel for the design of the growth mask and J. Breitfelder for the template preparation. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy─EXC-2123 QuantumFrontiers─390837967 as well as EXC-2122 PhoenixD─390833453.",
year = "2024",
month = jan,
day = "3",
doi = "10.1021/acs.cgd.3c01023",
language = "English",
volume = "24",
pages = "279--292",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "1",
}