Anti-phase domains in cubic GaN

verfasst von: Ricarda Maria Kemper, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans Jürgen Maier, Anja Dempewolf, Frank Bertram, Jürgen Christen, Ronny Kirste, Axel Hoffmann, Jörg Lindner, Donat Josef As
Abstract: The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.
Externe Organisation(en): Universität Paderborn
Otto-von-Guericke-Universität Magdeburg
Technische Universität Berlin
Typ: Artikel
Journal: Journal of applied physics
Band: 110
ISSN: 0021-8979
Publikationsdatum: 22.12.2011
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemeine Physik und Astronomie
Elektronische Version(en): https://doi.org/10.1063/1.3666050 (Zugang: Unbekannt)

BibTeX

@article{4975adfb5cc14a59bf86212280a1ed8f,
title = "Anti-phase domains in cubic GaN",
abstract = "The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.",
author = "{Maria Kemper}, Ricarda and Thorsten Schupp and Maik H{\"a}berlen and Thomas Niendorf and Maier, {Hans J{\"u}rgen} and Anja Dempewolf and Frank Bertram and J{\"u}rgen Christen and Ronny Kirste and Axel Hoffmann and J{\"o}rg Lindner and {Josef As}, Donat",
note = "Funding information: The authors would like to thank Prof. Dr. W. Bremser and especially Dipl.-Chem. Ing. N. Buitkamp (University of Paderborn) for access to the SEM. The work at Paderborn was financially supported by German Science Foundation (DFG) (Project No. AS 107/4-1, SCHM 136/11-1 and GRK 1464). The work at TU-Berlin was supported by DFG via SFB 787.",
year = "2011",
month = dec,
day = "22",
doi = "10.1063/1.3666050",
language = "English",
volume = "110",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "12",
}