Resonant tunneling diodes based on stacked self-assembled Ge/Si islands

verfasst von

O. G. Schmidtt, U. Denker, O. Kienzle, F. Ernst, R. J. Haug, K. Eberl

Abstract

We present a new concept and first results of resonant tunneling diodes based on self-assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current-voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistence is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.

Organisationseinheit(en)

Institut für Festkörperphysik

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung
Max-Planck-Institut für Intelligente Systeme (Stuttgart)

Typ

Aufsatz in Konferenzband

Seiten

487-490

Anzahl der Seiten

4

Publikationsdatum

01.12.2000

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Ingenieurwesen (insg.)