Electronically stimulated degradation of crystalline silicon solar cells

verfasst von: J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones, D. W. Palmer
Abstract: Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
Externe Organisation(en): Institut für Solarenergieforschung GmbH (ISFH)
Australian National University
University of Exeter
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Materials Research Society Symposium Proceedings
Band: 864
Seiten: 221-232
Anzahl der Seiten: 12
ISSN: 0272-9172
Publikationsdatum: 2005
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau
Elektronische Version(en): https://doi.org/10.1557/proc-864-e6.1 (Zugang: Unbekannt)

BibTeX

@article{158650ccd6e54404b45c622da2c5e0f0,
title = "Electronically stimulated degradation of crystalline silicon solar cells",
abstract = "Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.",
author = "J. Schmidt and K. Bothe and D. Macdonald and J. Adey and R. Jones and Palmer, {D. W.}",
year = "2005",
doi = "10.1557/proc-864-e6.1",
language = "English",
volume = "864",
pages = "221--232",
journal = "Materials Research Society Symposium Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",
note = "2005 materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",
}